DRV835x聊包養行情用于三相馬達的三相智能柵極驅動器

包養網單次

華秋PCB

高靠得住多層板制造商

華秋SMT

高靠得住一站式PCBA智造商

華秋商城

自營現貨電子元器件商城

PCB Layout

高多層、高密度產物design

鋼網制造

專注高品德鋼網制造

BOM配單

專門研究的一站式采購處理計劃

華秋DFM

一鍵剖析design隱患

華秋認證

認證檢測無可置疑

TI公司的DRV835x系列是用于三相馬達的9-100V三相智能柵極驅動器，集成了用于高邊和低邊的三個自力半橋柵極驅動器，電荷泵和線性穩壓器，以及可選擇的三個電流分放逐年夜器和350mA降壓穩壓器，任務電壓6-95V，輸入包養違法電流2.5V-75V/350mA.重要用在3相無刷DC（BLDC）馬達模塊，電扇，鼓風機和泵，電動自行車，電動滑板車和電動car ，無人機，機械人遠控玩具，工場主動化和紡織機械。本文先容了DRV835x系列重要特徵和框圖，柵極驅動器框圖，利用電路以及評價板DRV8353RS-EVM重要特徵和電路圖，資料清單與PCBdesign圖。

The DRV835x family of devices are integrated 100-V gate drivers for th包養意思ree-phase motor drive a甜心花園pplications.

These devices decrease system component count， cost， and complexity by integrating three independent halfbridgegate drivers， charge pump and linear regulator for the high-side and low-side gate driver supply voltages，optional triple current shunt amplifiers， and an optional 350-mA buck regulator. A standard serial peripheralinterface （SPI） provides a simple method for configuring the various device settings and reading fault diagnosticinformation through an external controller. Alternatively， a hardware interface （H/W） option allows for configuringthe most commonly used settings through fixed external resistors.

The gate drivers support external N-channel high-side and low-side power MOSFETs and can drive up to 1-Asource， 2-A sink peak currents with a 25-mA average output current. The high-side gate drive supply voltage isgenerated using a doubler charge-pump architecture that regulates the VCP output to VVDRAIN + 10.5-V. The lowsidegate drive supply voltage is generated using a linear regulator from the VM power supply that regulates theVGLS output to 14.5-V. The VGLS supply is further regulated to 11-V on the GLx low-side gate driver outputs. Asmart gate-drive architecture provides the ability to dynamically adjust the output gate-drive current strengthallowing for the gate driver to control the power MOSFET VDS switching speed. This allows for the removal ofexternal gate drive resistors and diodes reducing BOM component count， cost， and PCB area. The architecturealso uses an internal state machine to protect against gate-drive short-circuit events， control the half-bridge deadtime， and protect against dV/dt parasitic turnon of the external power MOSFET.

The gate drivers can operate in either a single or dual supply architecture. In the single supply architecture， VMcan be tied to VDRAIN and is regulat包養sded to the correct supply voltages internally. In the dual supply architecture，VM can be connected to a lower voltage supply from a包養故事 more efficient switching regulator to improve the devic包養心得eefficiency. VDRAIN stays connected to the external MOSFETs to set the correct charge pump and overcurrentmonitor reference.

The DRV8353 and DRV8353R devices integrate three， bidirectional current-shunt amplifiers for monitoring thecurrent level through each of the external half-bridges using a low-side shunt resistor. The gain setting of theshunt amplifier c做了什麼才知道。an be adjusted through the SPI or hardware interfa包養甜心網ce with the SPI providing additional flexibilityto adjust the output bias point.

The DRV8350R and DRV8353R devices integrate a 350-mA buck regulator that can be used to power anexternal controller or other logic circuits. The buck regulator is implemented as a separate internal die that canuse either the same or a different power supply from the gate driver.

In addition to the high level of device integration， the DRV835x family of devices pro包養一個月vides a wide range ofintegrated protection features. These features include power-supply undervoltage lockout （UVLO）， gate driveundervoltage lockout （GDUV）， VDS overcurrent monitoring （OCP）， gate-driver short-circuit detection （GDF）， andovertemperature shutdown （OTW/OTSD）。 Fault events are indicated by the nFAULT pin with detailed informationavailable in the SPI registers on the SPI device version.

The DRV835x family of devices are available in 0.5-mm pin pitch， QFN surface-mount packages. The QFN sizesare 5 × 5 mm for the 32-pin package， 6 × 6 mm for the 40-pin package， and 7 × 7 mm for the 48-pin package.

DRV8353RS重要包養網單次特徵：

1• 9 包養條件to 100-V， Triple Half-Bridge Gate Driver

– Optional Integrated Buck Regulator

– Optional Triple Low-Side Current ShuntAmplifiers

• Smart Gate Drive Architecture

– Adjustable Slew Rate Control For EMIPerformance

– VGS Handshake and Minimum Dead-TimeInsertion to Prevent Shoot-Through

– 50-mA to 1-A Peak Source Current

– 100-mA to 2-A Peak Sink Current

– dV/dt Mitigation Through Strong Pulldown

• Integrated Gate Driver Power Supplies

– Hig他漫不經心道：“回房間吧，我差不多該走了。”h-Side Doubler Charge Pump For 100%PWM Duty Cycle Control

– Low-Side Linear Regulator

• Integrated LM5008A Buck Regulator

包養犯法嗎– 6 to 95-V Operating Voltage Range

– 2.5 to 75-V， 350-mA Output Capability

• Integrated Triple Current Shunt Amplifiers

– Adjustable Gain （5， 10， 20， 40 V/V）

– Bidirectional o包養故事r Unidirectional Support

• 6x， 3x， 1x， and Independent PWM Modes

– Supports 120° Sensored Operation

• SPI or Hardware Inte包養女人rface包養網VIP Available

• Low-Power Sleep Mode （20 μA at VVM = 48-V）

• Integrated Protection Features

– VM Undervol包養行情tage Lockout （UVLO）

– Gate Drive Supply Undervoltage （GDUV）

– MOSFET VDS Overcurrent Protection （OCP）

– MOSFET Shoot-Through Prevention

– Gate Driver Fault （GDF）

– Thermal Warning and Shutdown （OTW/OTSD）

– Fault Condition Indicator （nFAULT）

DRV8353RS利用：

• 3-Phase Brushless-DC （BLDC） Motor Modules

• Fans， Blowers， and Pumps

• E-Bikes， E-Scooters， and E-Mobility

• Power and Garden Tools， Lawn Mowers

• Drones， Robotics， and RC Toys

• Factory Automation and Textile Machines

圖1.DRV8350H框圖

圖2.DRV8350S框圖

圖3.DRV8350RH框圖

圖4.DRV8350RS框圖

圖5.DRV8353H框圖

圖6.DRV8353S框圖

圖7.DRV8353女大生包養俱樂部RH框圖

圖8.DRV8353RS框圖

圖9.柵極驅動器框圖

圖10.DRV8353系列基礎利用電路圖（1）

圖11.DRV8353系列基礎利用電路圖（2）

評價板DRV8353RS-EVM

The DRV8353RS-EVM is a 15A， 3包養留言板-phase brushless DC drive stage based on the DRV8353RS gate driver and CSD19532Q5B NexFET™ MOSFETs.

The module has individual DC bus and phase voltage sense as well as individual low-side current shunt amplifiers， making this evaluation modul包養行情e ideal for sensorless BLDC algorithms. The module supplies MCU 3.3V power with an integrated 0.35A step down buck regulator. The drive stage has IDRIVE configuration， along with a fault pin and protection for short circuit， thermal， shoot-through， and under voltage conditions through configurable SPI包養價格.

評價板DRV8353RS-EVM重要特徵：

9- to 95-V operation

15 A continuous/20 A peak H-bridge output current

I台灣包養nternal buck regulator

Three individual， internal low-side current shunt amplifiers

INSTASPIN FOC BLDC firmware available

圖12.評價板DRV8353RS-EVM外形圖

圖13.評價板DRV8353RS-EVM框圖

圖14.評價板DRV8353RS-EVM硬件銜接圖（1）

圖15.評價板DRV8353RS-EVM硬件銜接圖（2）

圖16.評價板DRV8353Rx-EVM電路圖（1）：MD016A

甜心花園

圖17.評價板DRV8353Rx-EVM MD016A PCBdesign圖（1）

圖18.評價板DRV8353Rx-EVM MD016A PCBdesign圖（2）

圖19.評價板DRV8353Rx-EVM MD016A PCBdesign圖（3）

包養站長

圖20.評價板DRV8353Rx-EVM MD016A PCBdesign圖（4）

圖21.評價板DRV8353Rx-EVM MD016A PCBdesign圖（5）

圖22.評價板DRV8353Rx-EVM MD016A PCBdesign圖（6）

圖23.評價板DRV8353Rx-EVM MD016A PCBdesign圖（7）

圖24.評價板DRV8353Rx-EVM MD016A PCBdesign圖（8）

圖25.評價板DRV8353Rx-EVM MD016A PCBdesign圖（9）

圖26.評價板DRV8353Rx-EVM MD016A PCBdesign圖（10）

圖27.評價板DRV8353Rx-EVM MD016A（001）拆卸圖

圖28.評價板DRV8353Rx-EVM MD016A（002）拆卸圖

圖29.評價板DRV8353Rx-EVM MD017A電路圖（1）

圖30.評價板DRV8353Rx-EVM MD017A電路圖（2）

圖31.評價板DRV8353Rx-EVM MD017A PCBdesign圖（1）

圖32.評價板DRV8353Rx-EVM MD01包養站長7A PCBdesign圖包養網站（2）

圖33.評價板DRV8353Rx-EVM MD017A PCBdesign圖（3）

圖34.評價板DRV8353Rx-EVM MD017A PCBdesign圖（4）

圖35.評價板DRV8353Rx-EVM MD017A PCBdesign圖（5）

圖36.評價板DRV8353Rx-EVM MD017A “所以才說這是報應，肯定是蔡歡和張叔死了，鬼還在屋子裡，所以小姑娘之前落水了，現在被席家懺悔了。” ……一定是PCBdesign圖（6）

圖37.評價板DRV8353Rx-EVM MD017A PCBdesign圖（7）

包養感情圖38.評價板DRV8353Rx-EVM MD017A PCBdesign圖（8）

圖39.評價板DRV8353Rx-EVM MD017A PCB拆卸圖（1）

圖39.評價板DRV8353Rx-EVM MD017A包養網站 PCB拆卸圖（2）

評價板DRV8353Rx-EVM資料清單見：

MCU036A（001）_BOM.xls

MD016A（001）_BOM.xls

MD016A（002）_BOM.xls

slvc742a.zip

概況請見：

和

drv8353.pdf

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